IEEE Electron Device Letters
Journal Abbreviation: IEEE ELECTR DEVICE L
ISSN: 0741-3106
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Publications (9)
A GHz Operating CMOS Compatible ScAlN Based SAW Resonator Used for Surface Acoustic Waves/Spin Waves Coupling (2022)
Zdru I, Nastase C, Hess LN, Ciubotaru F, Nicoloiu A, Vasilache D, Dekkers M, et al.
Journal article
A Monolithically Integrated SiC Circuit Breaker (2021)
Boettcher N, Erlbacher T
Journal article
PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse (2019)
Das B, Lele A, Kumbhare P, Schulze J, Ganguly U
Journal article
Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks (2018)
Das B, Schulze J, Ganguly U
Journal article
Improved Off-Current and Modeling in Sub-430 °c Si p-i-n Selector for Unipolar Resistive Random Access Memory (2015)
Mandapati R, Shrivastava S, Sushama S, Saha B, Schulze J, Ganguly U
Journal article
Silicon tunneling field-effect transistors with tunneling in line with the gate field (2013)
Fischer IA, Bakibillah ASM, Golve M, Haehnel D, Isemann H, Kottantharayil A, Oehme M, Schulze J
Journal article
Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2 (2012)
Mueller J, Boescke TS, Schroeder U, Hoffmann R, Mikolajick T, Frey L
Journal article, Original article
Reduced on resistance in LDMOS devices by integrating trench gates into planar technology (2010)
Erlbacher T, Bauer AJ, Frey L
Journal article, Original article
A New Compact Model for the Avalanche Effect in InAlAs/InGaAs HBTs (2006)
Weiß O, Baureis P, Kellmann N, Weber N, Weigel R
Journal article