Applied Physics Express

Journal Abbreviation: APPL PHYS EXPRESS
ISSN: 1882-0778
Publisher: Japan Society of Applied Physics

Publications (2)

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Journal article
Unpublished / Preprint

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Abstract

Statistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions (2022) Besendoerfer S, Meissner E, Friedrich J Journal article Epitaxially grown indium phosphide quantum dots on a virtual Ge substrate realized on Si(001) (2012) Wiesner M, Bommer M, Schulz WM, Etter M, Werner J, Oehme M, Schulze J, et al. Journal article