Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019) Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X Conference contribution New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019) Höchbauer T, Heidorn C, Tsavdaris N Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019) Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T Conference contribution Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes (2019) Rusch O, Moult J, Erlbacher T Conference contribution Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019) Weiße J, Mitlehner H, Frey L, Erlbacher T Conference contribution Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup (2019) Arzig M, Salamon M, Uhlmann N, Wellmann P Journal article, Original article Channeling in 4H-SiC from an application point of view (2019) Pichler P, Sledziewski T, Häublein V, Bauer AJ, Erlbacher T Conference contribution