Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping (2020) Kocher M, Schlichting H, Kallinger B, Rommel M, Bauer AJ, Erlbacher T Conference contribution Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors (2019) Schlichting H, Sledziewski T, Bauer A, Erlbacher T Journal article Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019) Schöler M, Schuh P, Steiner J, Wellmann P Journal article, Original article Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019) Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P Journal article, Original article Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019) Salamon M, Arzig M, Uhlmann N, Wellmann P Journal article Matera building stones: Comparison between bioclastic and lithoclastic calcarenites (2019) Bonomo AE, Lezzerini M, Prosser G, Munnecke A, Koch R, Rizzo G Book chapter / Article in edited volumes Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation (2019) Albrecht M, Erlbacher T, Bauer A, Frey L Journal article, Report Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019) Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L Conference contribution