Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules (2019) Steiner J, Arzig M, Hsiao TC, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography (2019) Salamon M, Arzig M, Uhlmann N, Wellmann P Journal article Matera building stones: Comparison between bioclastic and lithoclastic calcarenites (2019) Bonomo AE, Lezzerini M, Prosser G, Munnecke A, Koch R, Rizzo G Book chapter / Article in edited volumes Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation (2019) Albrecht M, Erlbacher T, Bauer A, Frey L Journal article, Report Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019) Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L Conference contribution Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019) Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X Conference contribution New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019) Höchbauer T, Heidorn C, Tsavdaris N Conference contribution