Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding (2022) Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P Conference contribution In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry (2022) Ihle J, Wellmann P Conference contribution Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers (2022) Steiner J, Nguyen BD, Roder M, Danilewsky A, Sandfeld S, Wellmann P Conference contribution Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide (2022) Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P Conference contribution Review of Sublimation Growth of SiC Bulk Crystals (2022) Wellmann P, Arzig M, Ihle J, Kollmuß M, Steiner J, Mauceri M, Crippa D, et al. Conference contribution Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications (2022) Kollmuß M, Köhler J, Ou H, Fan W, Chaussende D, Hock R, Wellmann P Conference contribution Spark plasma sintering of paper-derived Ti3AlC2-based composites: Influence of sintering temperature (2021) Syrtanov M, Kashkarov E, Murashkina T, Travitzky N Conference contribution Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology (2020) Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T Conference contribution Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications (2020) Albrecht M, Pérez D, Martens R, Bauer AJ, Erlbacher T Conference contribution