Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy (2002) Hundhausen M, Ley L Journal article Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Study of boron incorporation during PVT growth of p-type SiC crystals (2001) Bickermann M, Hofmann HD, Rasp M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article, Original article Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals (2001) Selder M, Kadinski L, Durst F, Straubinger T, Wellmann P, Hofmann HD Journal article, Original article Stability criteria for 4H-SiC bulk growth (2001) Straubinger T, Bickermann M, Hofmann HD, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Investigation of a PVT SiC-growth set-up modified by an additional gas flow (2001) Straubinger T, Wellmann P, Winnacker A Journal article, Original article Preparation and characterization of hydrogen terminated 6H-SiC (2001) Ristein J, Ley L Journal article