Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC (2003) Hundhausen M, Ley L Journal article Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling (2003) Durst F, Hundhausen M, Winnacker A, Ley L Journal article Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling (2003) Wellmann P, Herro ZG, Selder M, Durst F, Püsche R, Hundhausen M, Ley L, Winnacker A Journal article, Original article 'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging (2002) Wellmann P, Herro ZG, Straubinger T, Winnacker A Journal article, Original article Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy (2002) Hundhausen M, Ley L Journal article Impact of SiC source material on temperature field and vapor transport during SiC PVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Study of boron incorporation during PVT growth of p-type SiC crystals (2001) Bickermann M, Hofmann HD, Rasp M, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process (2001) Wellmann P, Hofmann HD, Kadinski L, Selder M, Straubinger T, Winnacker A Journal article, Original article Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article, Original article