Modeling and experimental verification of SiC M-PVT bulk crystal growth (2006) Wellmann P, Müller R, Pons M Journal article, Original article Micro-optical characterization study of highly p-type doped SiC : Al wafers (2005) Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L Journal article, Original article Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability (2005) Sakwe A, Herro ZG, Wellmann P Journal article, Original article Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals (2005) Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P Journal article, Original article High Al-doping of SiC using a modified PVT (M-PVT) growth set-up (2005) Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P Journal article, Original article Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing (2005) Rambach M, Bauer A, Frey L, Friedrichs P, Ryssel H Journal article [01-15] grown 6H SiC bulk crystals investigated by high energy triple axis x-ray diffraction (2005) Hock R Conference contribution On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC (2004) Weingärtner R, Wellmann P, Winnacker A Journal article, Original article