In-situ X-ray measurements of defect generation during PVT growth of SiC (2007) Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A Journal article, Original article Impurity Conduction in Silicon Carbide (2007) Krieger M, Semmelroth K, Weber HB, Pensl G, Rambach M, Frey L Journal article Local Investigations of the Mechanical Properties of Ultrafine Grained Metals by Nanoindentations (2006) Müller J, Durst K, Amberger D, Göken M Journal article Strain Rate Sensitivity of Ultrafine Grained FCC- and BCC-Type Metals (2006) May J, Höppel HW, Göken M Journal article Mechanical Properties of Ultrafine Grained Metals under Cyclic and Monotonic Loads: An Overview (2006) Höppel HW Journal article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC (2006) Wellmann P, Queren D, Müller R, Sakwe A, Künecke U Journal article, Original article In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging (2006) Chaussende D, Wellmann P, Ucar M, Pons M, Madar R Journal article, Original article Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article Nanometrology - Nanopositioning- and nanomeasuring machine with integrated nanoprobes (2006) Jäger G, Hausotte T, Manske E, Büchner HJ, Mastylo R, Vorbringer-Dorozhovets N, Füßl R, Grünwald R Conference contribution