Role of boundaries in control of deformation rate and strength of crystalline materials (2009) Blum W Conference contribution Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Role of boundaries in control of deformation rate and strength of crystalline materials (2009) Blum W Journal article Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity (2009) Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P Journal article, Original article In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates (2009) Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R Journal article, Original article Thermal Expansion Coefficients of 6H Silicon Carbide (2009) Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A Journal article, Original article Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum (2009) Hens P, Künecke U, Wellmann P Journal article, Original article Strain rate sensitivity of ultrafine grained aluminium alloy AA6061 (2008) Vevecka-Priftaj A, Böhner A, May J, Höppel HW, Göken M Conference contribution