Chemical Vapor Deposition
Journal Abbreviation: CHEM VAPOR DEPOS
ISSN: 0948-1907
Publisher: Wiley-VCH Verlag
Publications (7)
Single-source precursor-based deposition of Sb2Te3 films by MOCVD (2013)
Bendt G, Schulz S, Zastrow S, Nielsch K
Journal article
Stoichiometry of Nickel Oxide Films Prepared by ALD (2011)
Bachmann J, Zolotaryov A, Albrecht O, Goetze S, Berger A, Hesse D, Novikov D, Nielsch K
Journal article, Original article
Methylated [(benzene)(1,3-butadiene)Ru0] derivatives as novel MOCVD precursors with favorable properties (2011)
Jipa I, Siddiqi MA, Siddiqui RA, Atakan B, Marbach H, Cremer T, Maier F, et al.
Journal article
[cis-(1,3-diene) 2W(CO) 2] complexes as MOCVD precursors for the deposition of thin tungsten - Tungsten carbide films (2010)
Jipa I, Heinemann FW, Schneider A, Popovska N, Siddiqi MA, Siddiqui RA, Atakan B, et al.
Journal article
MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications (2007)
Lemberger M, Schön F, Dirnecker T, Jank M, Frey L, Ryssel H, Paskaleva A, et al.
Journal article
Silicon carbide CVD for electronic device applications (2006)
Wellmann P, Pons M
Journal article, Editorial
Growth of silicon carbide bulk crystals with a modified physical vapor transport technique (2006)
Müller R, Künecke U, Queren D, Sakwe A, Wellmann P
Journal article